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ME2320D-G MOSFET N-Channel 30V 3.16A SOT-23/SC-59 marking WT ultra low on-resistance/fast switch

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current3.16A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance37mΩ/Ohm @4A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.0-3.0V
耗散功率Pd Power Dissipation750mW/0.75W
Description & ApplicationsRDS(ON)≦85mΩ@VGS=4.5V RDS(ON)≦115mΩ@VGS=2.5V RDS(ON)≦135mΩ@VGS=1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
描述与应用超高密度电池设计极低的RD(ON) 卓越的导通电阻和最大DC电流能力
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