ME2320D-G MOSFET N-Channel 30V 3.16A SOT-23/SC-59 marking WT ultra low on-resistance/fast switch|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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ME2320D-G MOSFET N-Channel 30V 3.16A SOT-23/SC-59 marking WT ultra low on-resistance/fast switch

Model：ME2320D-G
Mark / screen / code / typing：WT
Manufacturer：
Date Code：11+ 11+
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	30V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	3.16A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	37mΩ/Ohm @4A,10V
开启电压Vgs（th） Gate-Source Threshold Voltage	1.0-3.0V
耗散功率Pd Power Dissipation	750mW/0.75W
Description & Applications	RDS(ON)≦85mΩ@VGS=4.5V RDS(ON)≦115mΩ@VGS=2.5V RDS(ON)≦135mΩ@VGS=1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
描述与应用	超高密度电池设计极低的RD（ON）卓越的导通电阻和最大DC电流能力

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