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SI2314EDS MOSFET N-Channel 20V 4.9A SOT-23/SC-59 marking C4z6a low on-resistance。

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current4.9A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.033Ω/Ohm @5A,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage0.45V
耗散功率Pd Power Dissipation1.25W
Description & ApplicationsN-Channel 20-V (D-S) MOSFET TrenchFET Power MOSFET ESD Protected: 3000 V
描述与应用N-Channel 20-V (D-S) MOSFET 功率MOSFET ESD保护:3000 V
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