Scavenging browsing Mobile
Hot Search: SSM3K35MFV SSM3J36MFV 2SK3376TT-B
PDTC124XT NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 22k 47k gain80 SOT-23/SC-59 marking W46
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
基极输入电阻R1 Input Resistance(R1) | 22KΩ/Ohm |
基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
电阻比(R1/R2) Resistance Ratio | 0.47 |
直流电流增益hFE DC Current Gain(hFE) | 80 |
截止频率fT Transtion Frequency(fT) | |
耗散功率Pc Power Dissipation | 0.25W /250mW |
Description & Applications | Features Built-in bias resistors Reduces component count Simplifies circuit design Reduces pick and place costs |
描述与应用 | 特性 内置偏置电阻 减少了元件数量 简化电路设计 减少取放成本 |