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MUN2211JT1 NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 10k 10k SOT-23/SC-59 marking 8A ESD protection
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 35 |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. |
| 描述与应用 | 特性 通过小型化的设备和部件的数量减少，成本可以降低。 迷你型包装，缩小设备尺寸和 通过磁带包装盒包装自动插入。 |
