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MUN2211JT1 NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 10k 10k SOT-23/SC-59 marking 8A ESD protection

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)35
截止频率fT Transtion Frequency(fT)150MHz
耗散功率Pc Power Dissipation0.2W/200mW
Description & ApplicationsFeatures Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.
描述与应用特性 通过小型化的设备和部件的数量减少,成本可以降低。 迷你型包装,缩小设备尺寸和 通过磁带包装盒包装自动插入。
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