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2SD1280GSL NPN Transistors(BJT) 20V 1A 150MHz 180~280 500mV/0.5V SOT-89/SC-62 marking RS

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
20V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
180~280
管压降VCE(sat)
Collector-Emitter Saturation Voltage
500mV/0.5V
耗散功率Pc
Power Dissipation
1W
Description & ApplicationsSilicon NPN epitaxial planer type low-voltage type medium output power amplification Features * Low collector to emitter saturation voltage VCE(sat) *Satisfactory operation performances at high efficiency with the low-voltage power supply. *Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
描述与应用NPN硅外延平面型  低电压型介质输出功率放大  特点 *低集电极到发射极饱和电压VCE(SAT) *高效率令人满意的操作性能  低电压电源。 *小功率型封装,允许缩减设备 通过自动插入带包装盒包装
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