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2SD2459GSL NPN Transistors(BJT) 150V 1A 90MHz 170~340 110mV/0.11V SOT-89/SC-62 marking 2ES low frequency power amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 150V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 150V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| 截止频率fT Transtion Frequency(fT) | 90MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 170~340 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 110mV/0.11V |
| 耗散功率Pc Power Dissipation | 1W |
| Description & Applications | Silicon NPN epitaxial planer type For low-frequency power amplification Features High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 | NPN硅外延平面型 对于低频功率放大 特点 高集电极发射极电压VCEO。 大集电极功耗PC。 迷你功率型封装，通过自动插入带包装盒包装。 |
