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2SD2459GSL NPN Transistors(BJT) 150V 1A 90MHz 170~340 110mV/0.11V SOT-89/SC-62 marking 2ES low frequency power amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
150V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
150V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
90MHz
直流电流增益hFE
DC Current Gain(hFE)
170~340
管压降VCE(sat)
Collector-Emitter Saturation Voltage
110mV/0.11V
耗散功率Pc
Power Dissipation
1W
Description & ApplicationsSilicon NPN epitaxial planer type For low-frequency power amplification Features High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package and automatic insertion through the tape packing and the magazine packing.
描述与应用NPN硅外延平面型 对于低频功率放大 特点 高集电极发射极电压VCEO。 大集电极功耗PC。 迷你功率型封装,通过自动插入带包装盒包装。
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