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ME2N7002KW Complex FET 60V 300mA/0.3A SOT-363/SC70-6 marking 702
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 300mA/0.3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 6Ω@ VGS =4.5V, ID =300mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1~2.5V |
| 耗散功率Pd Power Dissipation | 350mW/0.35W |
| Description & Applications | Dual N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002KW is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.0A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. FEATURES ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● SOT-363 package design APPLICATIONS ● Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. ● High saturation current capability. Direct Logic-Level Interface: TTL/CM ● Battery Operated Systems ● Solid-State Relays |
| 描述与应用 | 双N沟道MOSFET 概述 的ME2N7002KW是双N沟道增强型场效应晶体管都采用高密度DMOS技术。这些产品都旨在最大限度地减少通态电阻，提供坚固，可靠，快速开关性能。它们可以被用来在大多数应用中需要高达300mA的DC并且可以提供脉冲电流高达1.0A。这些产品特别适用于低电压，低电流应用，如小型伺服电机控制，功率MOSFET的栅极驱动器，以及其他开关应用。 特点 ●超高密度电池设计极低的RDS（ON） ●卓越的导通电阻和最大DC电流能力 ●SOT-363封装设计 应用 ●司机：继电器，螺线管，灯，锤子，显示，记忆，晶体管等。 ●高饱和电流能力。直接逻辑电平接口：TTL/ CM ●电池供电系统 ●固态继电器 |
