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2N7002EPT MOSFET N-Channel 60V 250mA/0.25A SOT-323/SC-70 marking 6C low Rds

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Product description
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current250mA/0.25A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance1.7 @250mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2.5V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor Features N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small surface mounting type. (SC-70/SOT-323) High density cell design for low RDS(ON). Suitable for high packing density.
描述与应用表面贴装 N沟道增强型场效应晶体管 特性 N沟道增强型场效应晶体管 小型表面贴装型。 (SC-70/SOT-323) 高密度单元设计的低漏源导通电阻)。 适用于高包装密度。
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