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2N7002-T1 MOSFET N-Channel 60V 115mA/0.115A SOT-23/SC-59 marking 72 low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 115mA/0.115A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 7.5Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | N-Channel 60-V (D-S) MOSFET Features N-Channel 60-V (D-S) MOSFET Low On-Resistance: 2.5 ohm Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage |
| 描述与应用 | N沟道60-V（D-S）的MOSFET 特性 N沟道60-V（D-S）的MOSFET 低导通电阻2.5欧姆 低阈值：2.1 V 低输入电容：22 pF 开关速度快：7 NS 低输入和输出泄漏 |
