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BC857CLT1G PNP transistors(BJT) -50V -100mA/-0.1A 100MHz 420~800 -650mV/-0.65V SOT-23/SC-59 marking 3G
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −45V |
集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 420~800 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −650mV/-0.65V |
耗散功率Pc PoWer Dissipation | 300mW/0.3W |
Description & Applications | General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available |
描述与应用 | 通用晶体管 PNP硅 特点 •无铅包可用 |