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BC847BS NPN+NPN Complex Bipolar Transistor 50V 100mA HEF=200~450 SOT-363/SC-88 marking 1Ft switch and digital circuit application
V(BR) CBO Collector-Base Voltage |
50V |
V(BR) CEO Collector-Emitter Voltage |
45V |
Collector Current(IC) | 100MA/0.1A |
Transtion Frequency(fT) | 100MHZ |
DC Current Gain(hFE) | 200~450 |
VCE (sat) Collector-Emitter Saturation Voltage |
0.3V |
Power Dissipation (Pd) | 0.2W |
Description & Applications | FEATURES
• Low collector capacitance
• Low collector-emitter saturation voltage
• Closely matched current gain
• Reduces number of components and board space
• No mutual interference between the transistors.
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Technical Documentation Download | Read Online |