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BC847BS NPN+NPN Complex Bipolar Transistor 50V 100mA HEF=200~450 SOT-363/SC-88 marking 1Ft switch and digital circuit application

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Product description

V(BR) CBO

Collector-Base Voltage

 50V

V(BR) CEO

Collector-Emitter Voltage

 45V
Collector Current(IC)  100MA/0.1A
Transtion Frequency(fT)  100MHZ
DC Current Gain(hFE)  200~450

VCE (sat)

Collector-Emitter Saturation Voltage

 0.3V
Power Dissipation (Pd)  0.2W
Description & Applications  FEATURES
• Low collector capacitance
• Low collector-emitter saturation voltage
• Closely matched current gain
• Reduces number of components and board space
• No mutual interference between the transistors.
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