LBC847BDW1T1G NPN+NPN Complex Bipolar Transistor 50V 100mA HEF=200~450 SOT-363/SC-88 marking 1F switch and digital circuit application|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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LBC847BDW1T1G NPN+NPN Complex Bipolar Transistor 50V 100mA HEF=200~450 SOT-363/SC-88 marking 1F switch and digital circuit application

Model：LBC847BDW1T1G
Mark / screen / code / typing：1F
Manufacturer：
Date Code：06NOPB
Package：SOT-363/SC-88
Standard Package：3000
Min Order：10

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Product description

V(BR) CBO Collector-Base Voltage	50V
V(BR) CEO Collector-Emitter Voltage	45V
Collector Current(IC)	0.1A
Transtion Frequency(fT)	100MHZ
DC Current Gain(hFE)	200~450
VCE (sat) Collector-Emitter Saturation Voltage
Power Dissipation （Pd）	0.38W
Description & Applications	Dual General Purpose Transistors NPN Duals
Technical Documentation Download	Read Online

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