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SMBT3906S PNP+PNP Complex Bipolar Transistor -40V -200mA HEF=100~300 SOT-363 marking S2A switch and digital circuit application

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Product description

V(BR) CBO

Collector-Base Voltage

 40V

V(BR) CEO

Collector-Emitter Voltage

 40V
Collector Current(IC)  200MA/0.2A
Transtion Frequency(fT)  250MHZ
DC Current Gain(hFE)  100~300

VCE(sat)

Collector-Emitter Saturation Voltage

 0.4V
Power Dissipation (Pd)  250MW/0.25W
Description & Applications  PNP Silicon Switching Transistor Array
 High DC current gain: 0.1mA to 100mA
 Low collector-emitter saturation voltage
 Two ( galvanic) internal isolated Transistors
 with good matching in one package
Technical Documentation Download Read Online
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