Scavenging browsing Mobile
Hot Search: SSM3K35MFV SSM3J36MFV 2SK3376TT-B
RN1106ACT NPN Bipolar Digital Transistor (BRT) 50V 80mA 4.7k 47k gain80 SOT-883/CST3/0402 marking C5 switch inverting circuit interface circuit and driver circuit
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 80mA |
基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
电阻比(R1/R2) Resistance Ratio | 0.1 |
直流电流增益hFE DC Current Gain(hFE) | 80 |
截止频率fT Transtion Frequency(fT) | |
耗散功率Pc Power Dissipation | 0.1W/100mW |
Description & Applications | Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications •Incorporating a bias resistor into a transistor reduces the number of parts, which enables the manufacture of ever more compact equipment and saves assembly cost. • Complementary to RN2101ACT to RN2106ACT |
描述与应用 | 开关应用逆变电路中的应用接口电路中的应用驱动电路的应用 •将偏置电阻到一个晶体管减少零件数量,使制造更紧凑的设备节约装配成本 •互补的rn2101act到rn2106act |