My order
Share to:  
Location:Home > Stock Inventory > Product Details

HN2C01FE-GR NPN+NPN Complex Bipolar Transistor 60V 150mA HEF=200~400 SOT-563/ES6 marking L1G switch and digital circuit application

Hot selling goods

Product description

V(BR) CBO

Collector-Base Voltage

 60V

V(BR) CEO

Collector-Emitter Voltage

 50V
Collector Current(IC)  150MA
Transtion Frequency(fT)  60MHZ
DC Current Gain(hFE)  200~400

VCE (sat)

Collector-Emitter Saturation Voltage

 0.1V
Power Dissipation (Pd)  0.1W
Description & Applications  Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) • Small package (dual type) • High voltage and high current : VCEO = 50V, IC = 150mA (max) • High hFE : hFE = 120~400 • Excellent hFE linearity : hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) • Audio Frequency General Purpose Amplifier Applications
Technical Documentation Download Read Online
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00