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HN2C01FE-GR NPN+NPN Complex Bipolar Transistor 60V 150mA HEF=200~400 SOT-563/ES6 marking L1G switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
60V |
|
V(BR) CEO Collector-Emitter Voltage |
50V |
| Collector Current(IC) | 150MA |
| Transtion Frequency(fT) | 60MHZ |
| DC Current Gain(hFE) | 200~400 |
|
VCE (sat) Collector-Emitter Saturation Voltage |
0.1V |
| Power Dissipation （Pd） | 0.1W |
| Description & Applications | Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) • Small package (dual type) • High voltage and high current : VCEO = 50V, IC = 150mA (max) • High hFE : hFE = 120~400 • Excellent hFE linearity : hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) • Audio Frequency General Purpose Amplifier Applications |
| Technical Documentation Download | Read Online |
