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2SC2712S-Y NPN Transistors(BJT) 60V 150mA/0.15A 80MHz 120~240 250mV/0.25V SOT-23/SC-59 marking LY radio general amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 150mA/0.15A |
截止频率fT Transtion Frequency(fT) | 80MHz |
直流电流增益hFE DC Current Gain(hFE) | 120~240 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 250mV/0.25V |
耗散功率Pc Power Dissipation | 150mW/0.15W |
Description & Applications | NPN Silicon epitaxial Transistors Audio frequency general purpose amplifier applications Features High voltage and high current Excellent hFE linearity High hFE Low noise Small package Complementary to 2SA1162 |
描述与应用 | NPN硅外延晶体管 音频通用放大器应用 特点 高电压和高电流 优秀HFE线性 高HFE 低噪音 小型封装 互补2SA1162 |