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SSM3J307T MOSFET P-Channel -20V -5A 0.025ohm SOT-23 marking KDP power managementswitch high-speed switch 1.5V drive low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.025Ω @-4A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.3--1.0V |
| 耗散功率Pd Power Dissipation | 700mW/0.7W |
| Description & Applications | Power Management Switch Applications ○ High-Speed Switching Applications • 1.5 V drive • Low ON-resistance: Ron = 83 mΩ (max) (@VGS = -1.5 V) Ron = 56 mΩ (max) (@VGS = -1.8 V) Ron = 40 mΩ (max) (@VGS = -2.5 V) Ron = 31 mΩ (max) (@VGS = -4.5 V) |
| 描述与应用 | 电源管理开关应用 ○高速开关应用 •1.5 V驱动器 •低导通电阻RON =83MΩ（最大）（@ VGS=-1.5 V） 罗恩=56MΩ（最大）（@ VGS=-1.8 V） 罗恩=40MΩ（最大）（@ VGS=-2.5 V） 罗恩=31MΩ（最大）（@ VGS=-4.5 V） |
