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STD1664YS NPN 40V 1A 150MHZ HEF=100~320 SOT89 MARKING YS
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
40V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
32V |
集电极连续输出电流IC Collector Current(IC) |
1A |
截止频率fT Transtion Frequency(fT) |
150MHz |
直流电流增益hFE DC Current Gain(hFE) |
100~320 |
管压降VCE(sat) Collector-Emitter Saturation Voltage |
150mV/0.15V |
耗散功率Pc Power Dissipation |
500mW/0.5W |
Description & Applications | Features • NPN Silicon Transistor • PC(Collector dissipation)=2W(Ceramic substate of 40×40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132 Descriptions • Medium power amplifier application |
描述与应用 | 特点 •NPN硅晶体管 •PC(集电极耗散)=2W(40×40×0.8毫米的陶瓷子) •低集电极饱和电压VCE(星期六)=0.15V(典型值) •互补配对STB1132 简述 •中等功率放大器中的应用 |