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RN1111CT NPN Bipolar Digital Transistor (BRT) 20V 50mA 10k gain300 SOT-883/CST3/0402 marking F switch inverting circuit interface circuit and driver circuit
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC Collector Current(IC) | 50mA |
基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
电阻比(R1/R2) Resistance Ratio | |
直流电流增益hFE DC Current Gain(hFE) | 300 |
截止频率fT Transtion Frequency(fT) | |
耗散功率Pc Power Dissipation | 0.05W/50mW |
Description & Applications | Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications •Incorporating a bias resistor into a transistrreduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. •Complementary to RN2110CT, RN2111CT |
描述与应用 | 开关应用 逆变电路应用 接口电路的应用 驱动器电路应用 •将偏置电阻晶体管,减少了部件数量 减少零件数,使更加 紧凑的设备和节省组装成本。 •互补RN2110CTRN2111CT |