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SI2305ADS-T1-GE3 MOSFET P-Channel -8V -5.4A 0.032ohm SOT-23 marking 5AA

Model：SI2305ADS-T1-GE3
Mark / screen / code / typing：5AA
Manufacturer：
Date Code：10+rohs 10+NOPB
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-8V
最大栅源极电压Vgs(±) Gate-Source Voltage	8V
最大漏极电流Id Drain Current	-5.4A
源漏极导通电阻Rds Drain-Source On-State Resistance	0.032Ω @-4.1A,-10V
开启电压Vgs（th） Gate-Source Threshold Voltage	-0.45V-0.8V
耗散功率Pd Power Dissipation	1.7W
Description & Applications	FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested
描述与应用	Power MOSFET • 100 % Rg Tested • 100 % UIS Tested

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