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DMP3030SN-7 P MOS FET 30V 0.7A SOT23 MARKING PS2 Low Input Capacitance
| 最大源漏极电压Vds Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
±20V |
| 最大漏极电流Id Drain Current |
0.7A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance |
0.35Ω~0.45Ω VGS = -4.5V, ID = -0.4A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
-1.0v~-3.0v |
| 耗散功率Pd Power Dissipation |
500mw/0.5w |
| Description & Applications | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR. * Low On-Resistance . * Low Gate Threshold Voltage . * Low Input Capacitance . * Fast Switching Speed. |
| 描述与应用 | P沟道增强型场效应晶体管。 *低导通电阻。 *低栅极阈值电压。 *低输入电容。 *开关速度快。 |
