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SSM5N16FE Complex FET 20V 200mA/0.2A SOT-553/ESV marking DS high-speed switch
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 200mA/0.2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 3Ω@ VGS = 4V, ID = 10mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6~1.1V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type High-Speed Switching Applications Analog-Switch Applications • Input impedance is high; driving current is extremely low. • Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. • High-speed switching • Housed in an ultra-small package suitable for high density mounting |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 模拟开关应用 •输入阻抗高，驱动电流极低。 •可直接驱动一个CMOS设备，即使在低电压下，由于低 栅极阈值电压。 •高速开关 •坐落在一个超小型封装，适用于高密度安装 |
