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EMA8 PNP+PNP Complex Bipolar Digital Transistor -40V -100mA 300mW/0.3W R1=10KΩ R2=47KΩSOT-553/EMT5 marking A8 switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | 100MA |
| Input Resistance(R1) | 10KΩ |
| Base-Emitter Resistance(R2) | 47 KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 0.212 |
| DC Current Gain(hFE) | |
| Transtion Frequency(fT) | |
| Power Dissipation （Pd） | 0.3W |
| Description & Applications | 1) Two DTA114Y chips in a EMT package.
2) Dual PNP silicon transistor (each with two built in resistors)
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| Technical Documentation Download | Read Online |
