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MT3S14FS NPN 6V 11GHZ FSM MARKING OH

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
6V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
2.5V
集电极连续输出电流IC
Collector Current(IC)
30mA
截止频率fT
Transtion Frequency(fT)
11GHZ
直流电流增益hFE
DC Current Gain(hFE)
90~150
管压降VCE(sat)
Collector-Emitter Saturation Voltage
 
耗散功率Pc
Power Dissipation
85MW
Description & Applications TOSHIBA Transistor Silicon NPN Epitaxial Planar Type . * VHF~UHF Band Low-Noise Amplifier Applications. * VHF~UHF Band Buffer Applications. * Superior performance in buffer applications. * Superior noise characteristics:NF = 1.7dB, |S21e|2 = 7dB (f = 2 GHz).
描述与应用 东芝晶体管NPN硅外延平面型。 * VHF??UHF频段低噪声放大器应用。 * VHF??UHF频段缓冲应用。 *缓冲应用中的卓越性能。 *卓越的噪声特性:NF=1.7分贝,S21E|2=7分贝(F =2GHZ)。
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