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RQ1E070RP P MOSFET -30V -7A TSMT8 MARKING UE Low On-resistance 4V drive

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Product description
Drain-Source Voltage (Vds)  -30V

Vgs (±)

Gate-Source Voltage 

 ±20V
Drain Current (Id)  -7A
Drain-Source On-State (Rds)  ID=3.5A, VGS=4.0V RDS=19~27mΩ
Gate-Source Threshold Voltage (th)    -1~-2.5v
Power dissipation (Pd)  1.5W
Description & Applications  1) Low On-resistance.
2) High power package.
3) 4V drive.

 

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