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RN2906FS PNP+PNP Complex Bipolar Digital Transistor -20V -50mA HEF=120 R1=4.7KΩ R2=47KΩ 50mW SOT-963/FS6 marking H5 switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -50MA |
| Input Resistance(R1) | 4.7KΩ |
| Base-Emitter Resistance(R2) | 47 KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 0.1 |
| DC Current Gain(hFE) | |
| Transtion Frequency(fT) | |
| Power Dissipation （Pd） | 50MW |
| Description & Applications | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine pitch small mold (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
|
| Technical Documentation Download | Read Online |
