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SSM6J402TU MOSFET P-Channel -30V -2A 225mohm SOT-363 marking KPE high-speed switch DC/DCconverter low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 225mΩ@ VGS = -4V, ID = -500mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.2~-2.6V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ○ DC/DC Converter Application ○ High-Speed Switching Applications • 4.0 V drive • Low ON-resistance : RDS(ON) = 225mΩ max (@VGS = −4 V) : RDS(ON) = 117mΩ max (@VGS = −10 V) |
| 描述与应用 | 东芝场效应晶体管的硅P沟道MOS类型 ○DC/ DC转换器应用 ○高速开关应用 •4.0 V驱动器 •低导通电阻RDS（ON）=225mΩ最大（@ VGS=-4 V） RDS（ON）=117mΩ最大（@ VGS=-10 V） |
