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TPCP8G01 PNP+Ｐ Channel MOS FET PS-8 MARKING 8G01
| Transistor Type | PNP |
Collector-Base Voltage(VCBO) |
-30V |
Collector-Emitter Voltage(VCEO) |
-20V |
Collector Current(IC) |
-3.0A |
Transtion Frequency(fT) |
|
DC Current Gain(hFE) |
200~500 |
| VCE（sat） Collector-Emitter Saturation Voltage |
-0.19V |
| MOSFET TYPF | P Channel MOS |
| Vds Drain-Source Voltage |
-20V |
| Vgs(±) Gate-Source Voltage |
±8V |
Drain Current(ID) |
-2.0A |
| Rds(on) FET Drain-Source On-State Resistance |
ID = −1.0 A, VGS = −4 V RDS=90~130mΩ
ID = −0.5 A, VGS = −2.5 V RDS=124~186mΩ
ID = −0.2 A, VGS = −1.8V RDS=180~320mΩ
|
| Vgs（th） Gate-Source Threshold Voltage |
-0.3~1.0V |
Power Dissipation(PD_ |
0.94W |
Description & Applications |
Transistor Silicon PNP Epitaxial Type／Field Effect Transistor Silicon P Channel MOS Type
○ Switching Applications
• Multi-chip discrete device: PNP Transistor and Ｐ Channel MOS FET
• Small footprint due to small and thin package
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