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S2C3303-0 NPN 100V 5A 120MHZ TO252 MARKING C3303
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
100V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
80V |
| 集电极连续输出电流IC Collector Current(IC) |
5A |
| 截止频率fT Transtion Frequency(fT) |
120MHZ |
| 直流电流增益hFE DC Current Gain(hFE) |
40 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
0.2~0.4 |
| 耗散功率Pc Power Dissipation |
1W |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) . * High Current Switching Applications * DC-DC Converter Applications * Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) * High speed switching time: tstg = 1.0 μs (typ.) |
| 描述与应用 | TOSHIBA晶体管的硅NPN外延式（PCT程序）。 *高电流开关应用 * DC-DC转换器应用 *低集电极饱和电压VCE（sat）=0.4 V（最大值）（IC=3A） *高速开关时间：TSTG=1.0微秒（典型值） |
