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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-1.4A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.150Ω @-1.7A,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.0--3.0V
耗散功率Pd
Power Dissipation
900mW/0.9W
Description & ApplicationsP-Channel, 30-V (D-S) MOSFET
描述与应用P沟道30-V(D-S)的MOSFET
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