Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
XP152A01D8MR P-Channel Power MOS FET -20V -0.5A SOT23 MARKING 201 Ultra High-Speed Switching Low On-State Resistance
| 最大源漏极电压Vds Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
12V |
| 最大漏极电流Id Drain Current |
-0.5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance |
0.36Ω @-300mA,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
-0.5V |
| 耗散功率Pd Power Dissipation |
500mW/0.5W |
| Description & Applications | Features Low on-state resistance: Rds(on)=0.48Ω(Vgs=-4.5 Rds(on)=0.80Ω(Vgs=-2.5V) Ultra high-speed switching Operational Voltage: -2.5V High density mounting: SOT-23 |
| 描述与应用 | 低通态电阻：RDS（ON）=0.48Ω（VGS=-4.5V） RDS（ON）=0.80Ω（VGS=-2.5V） 超高速开关 工作电压：-2.5V 高密度安装：SOT-23 |
