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TPCP8006 N MOSFET 20V 9.1A PS-8 MARKING 8006 Enhancement mode Low leakage current
| Drain-Source Voltage （Vds） | 20V |
|
Vgs(±) Gate-Source Voltage |
±12V |
| Drain Current （Id） | 9.1A |
| Drain-Source On-State （Rds） | VGS = 2.5 V, ID = 4.5 A RDS=9.5~13.7mΩ
VGS = 4.5 V, ID = 4.5 A RDS=6.5~10mΩ
|
|
Vgs （th） Gate-Source Threshold Voltage |
0.5~1.2v |
| Power dissipation （Pd） | 0.84W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.)
• High forward transfer admittance:|Yfs| = 36 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA)
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