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HB6N0530TU MOSFET Dual N-ch 30V 500mA SOT-363F
| Drain-Source Voltage (Vds) | 30V |
|
Vgs(±) Gate-Source Voltage |
12V |
| Drain Current （Id） | 0.5A |
|
Rds(on) Drain-Source On-State Resistance |
Ron = 145mΩ (max) (@VGS = 4.5 V)
Ron = 180mΩ (max) (@VGS = 2.5 V)
|
|
Vgs(th) Gate-Source Threshold Voltage |
|
| Power Dissipation (Pd) | 500MW |
| Description & Applications | High Speed Switching Applications |
| Technical Documentation Download | Read Online |
