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PIMD2 NPN/PNP resistor-equipped transistors 50V 0.1A R1=R2=22KΩ SOT163 MARKING M5
| Q1 Collector-Base Voltage(VCBO) | 50V |
| Q1Collector-Emitter Voltage(VCEO) | 50V |
| Q1 Collector Current(IC) | 0.1A |
| Q2 Collector-Base Voltage(VCBO) | -50V |
| Q2Collector-Emitter Voltage(VCEO) | -50V |
| Q2Collector Current(IC) | -0.1A |
| Q1 Input Resistance(R1) | 22KΩ |
| Q1Base-Emitter Resistance(R2) | 22KΩ |
| Q1(R1/R2) Q1 Resistance Ratio | 1 |
| Q2 Input Resistance(R1) | 22KΩ |
| Q2Base-Emitter Resistance(R2) | 22KΩ |
| Q2(R1/R2) Q2 Resistance Ratio | 1 |
| DC Current Gain(hFE) Q1/Q2 | 60/60 |
| Transtion Frequency(fT) Q1/Q2 | |
| Power Dissipation | 0.3W |
| Description & Applications |
* Built-in bias resistors
* Simplifies circuit design
* Reduces component count
* Reduces pick and place costs.
* General purpose switching and amplification
* Inverter and interface circuits
* Circuit driver.
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