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RF amplifier BGA736L16 E6327 PG-TSLP-16-1 marking BGA736
频率Frequency | 800MHz,900MHz,1.8GHz,1.9GHz,2.1GHz |
P1dB | -11dBm |
增益Gain | 16.1dB |
噪声系数Noise Figure | 7.8dB |
RF 类型RF Type | W-CDMA,HSPDA |
电源电压Voltage - Supply | 2.7 V ~ 3 V |
电源电流Current - Supply | 5.3mA |
测试频率Test Frequency | 1.9GHz |
Description & Applications | The BGA736L16 is a highly flexible, tri-gain mode, and tri-band (2100, 1900/2100, 800/900 MHz) MMIC low noiseamplifier for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA736L16features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection on-chip andmatching off chip.While two gain modes are common in W-CDMA systems, a third gain mode has been introduced to reduce theLNA gain just enough to pass adjacent channel tests without compromising on HSDPAperformance. The1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing theinput matching and usingan additional external output matching network. This document specifies deviceperformance for the bandcombinations - UMTS bands I / II / V and UMTS bands I / IV / VIII Features Gain: 16 / 3 / -8 dB in high / mid / low gain mode Noise figure: 1.1 dB in high gain mode Supply current: 5.3 / 5.3 / 0.85 mA in high / mid / low gain modes Standby mode current consumption < 2 µA Outputs internally matched to 50 Ω2 kV HBM ESD protection Low external component countSmall leadless TSLP-16-1 package (2.3 x 2.3 x 0.39 mm)Pb-free (RoHS compliant) package |
描述与应用 | 所述BGA736L16是一个高度灵活,三增益模式,和三频(2100,1900/2100,800/900 MHz)的高频MMIC低噪声放大器,用于在世界范围内使用基于英飞凌专有的和具有成本效益的SiGe:C技术,BGA736L16具有动态增益控制,温度稳定,待机模式和片2 kV ESD保护和匹配片外而两个增益模式是在W-CDMA系统共同的第三增益模式已被引入,以减少LNA增益足够通过相邻信道测试,在不影响性能的HSDPA的1900兆赫路径可以通过优化的输入匹配,并使用被转换成2100 MHz的路径,反之亦然一个额外的外部输出匹配网络。该文件规定了乐队设备性能组合 - UMTS频段I / II/ V和UMTS频段I / IV/ VIII产品特点增益:16/3/-8 dB的高/中/低增益模式噪声系数:1.8分贝高增益模式电源电流:5.3/5.3/0.85毫安高/中/低增益模式待机模式电流消耗<2μA输出内部匹配50Ω2千伏HBM ESD保护低外部元件数量小型无铅TSLP-16-1封装(2.3×2.3×0.39毫米)无铅(符合RoHS)封装 |