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DMN5L06DWK-7 DUAL N-CHANNEL ENHANCEMENT MOSFET50V 308MA SOT-363/SC70-6 MARKING DABZ4
| Drain-Source Voltage (Vds) | 50V |
|
Vgs(±) Gate-Source Voltage |
20V |
| Drain Current （Id） | 305MA |
|
Rds(on) Drain-Source On-State Resistance |
VGS = 5.0V, ID = 50mA 2Ω |
|
Vgs(th) Gate-Source Threshold Voltage |
VDS = VGS, ID = 250uA 1.2v |
| Power Dissipation (Pd) | 200MW |
| Description & Applications | Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV"Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability |
| Technical Documentation Download | Read Online |
