集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC
Collector Current(IC) | 150mA/0.15A |
截止频率fT
Transtion Frequency(fT) | 4.7GHz |
直流电流增益hFE
DC Current Gain(hFE) | 135~270 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 1.3W |
| Description & Applications | NPN EPITAXIAL planar SILICON TRANSISTOR High frequency semi power output stage low noise medium output amplify application FEATURES • High frequency medium output amplification |
| 描述与应用 | NPN平面外延硅晶体管 高频率的半功率输出级 低噪音介质输出放大应用 特点 •高频介质输出放大 |