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Parameters:

  • Model:2SD1766 T100Q
  • Manufacturer:HUABAN
  • Date Code:05+rohs 05+ROHS300
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:DBQ
  • Package:SOT-89/SC-62/MPT3

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
32V
集电极连续输出电流IC
Collector Current(IC)
2A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
120~270
管压降VCE(sat)
Collector-Emitter Saturation Voltage
500mV/0.5V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & Applications Features * Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) structure Epitaxial planar type NPN silicon transistor
描述与应用 特点 *低VCE(SAT)。 VCE(饱和)= 0.5V (IC / IB=2A/0.2A) 结构 外延平面型 NPN硅晶体管

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SD1766 T100Q
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