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  • Model:2SK1103-P
  • Manufacturer:HUABAN
  • Date Code:05+NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:4LP
  • Package:SOT-23/SC-59

最大源漏极电压Vds
Drain-Source Voltage
65v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-65v
漏极电流(Vgs=0V)IDSS
Drain Current
0.6~1.5ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-1.5v
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & Applications•Silicon N-Channel Junction FET •For switching •Low ON-resistance •Low-noise characteristics
描述与应用•硅N沟道结型场效应管 •对于开关 •低导通电阻 •低噪声特性

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK1103-P
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