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Parameters:

  • Model:2SK1109
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:0
  • Min Order:10
  • Mark/silk print/code/type:J32
  • Package:SC59

最大源漏极电压Vds
Drain-Source Voltage
20v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-20v
漏极电流(Vgs=0V)IDSS
Drain Current
0.04~0.07ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.1~1v
耗散功率Pd
Power Dissipation
80mw
Description & Applications•N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR •Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S
描述与应用•N沟道硅结型场效应晶体管 •小型封装 •高正向转移导纳 1000μs典型值。 (IDSS= 100μA) 1600μs典型值。 (IDSS= 200μA) •包括二极管和高阻力在G ​​- S

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK1109
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