最大源漏极电压Vds
Drain-Source Voltage | 30v |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | -30v |
漏极电流(Vgs=0V)IDSS
Drain Current | 0.6~1.5ma |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | -1~-4v |
耗散功率Pd
Power Dissipation | 200mW/0.2W |
| Description & Applications | •Silicon N-Channel Junction FET Low-Frequency General- Purpose Amp Applications Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and impedance conversion. |
| 描述与应用 | •硅N沟道结型场效应管低频率 通用放大器应用 非常适于电位器，模拟开关，低频放大器，恒流电源，和阻抗转换。 |