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Parameters:

  • Model:2SK3064
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:2D
  • Package:SOT-323/SC-70

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance30Ω/Ohm @10mA,5V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2V
耗散功率Pd Power Dissipation150mW/0.15W
Description & ApplicationsSilicon MOS FETs (Small Signal) Silicon N-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching Features Silicon N-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching High-speed switching S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. Low-voltage drive (Vth: −1 to 2V) Low Ron
描述与应用硅MOS场效应管(小信号) 硅N沟道MOS FET 对于开关的二次电池(锂离子电池等) 特性 硅N沟道MOS FET 二次电池(锂离子电池等) 用于开关 高速开关 S-迷你型包装,使瘦身套和通过自动插入磁带/盒包装。 低电压驱动(VTH:-1至2V) 低Ron

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK3064
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