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Parameters:

  • Model:2SK3072
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:HK
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage450V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current30mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance210Ω/Ohm @15mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2V
耗散功率Pd Power Dissipation250mW/0.25W
Description & ApplicationsN-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Ultrahigh-Speed Switching Applications Ultrahigh-speed switching Low-voltage drive
描述与应用N-沟道硅MOSFET 超高速开关应用 特性 超高速开关应用 超高速开关 低电压驱动

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK3072
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