Home
Cart0

×

Parameters:

  • Model:BFG135A
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:BFG135
  • Package:SOT-223

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
25V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
15V
集电极连续输出电流IC
Collector Current(IC)
150mA/0.15A
截止频率fT
Transtion Frequency(fT)
4.5Ghz~6Ghz
直流电流增益hFE
DC Current Gain(hFE)
80~250
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
1W
Description & ApplicationsNPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 6 GHz
描述与应用NPN硅RF晶体管 •对于低-失真的的的宽带输出放大器中   天线和电信中的阶段   高达在集电极电流从至2 GHz的系统中   70mA到130毫安 •DECT和PCN系统上的的电源放大器,适用于 •集成的的发射极镇流器电阻器 •fT的=6 GHz的

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
BFG135A
*Title:
Message:
*Code: