最大源漏极电压Vds
Drain-Source Voltage | -60V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -20V |
最大漏极电流Id
Drain Current | -3A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 135mΩ@ VGS = -4.5V, ID = -2.7A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -1~-3V |
耗散功率Pd
Power Dissipation | 1.6W |
| Description & Applications | 60V P-Channel Logic Level Power Trench MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage Power Trench process. It has been optimized for power management applications. Applications • DC-DC converters • Load switch • Power management Features • Fast switching speed • High performance trench technology for extremely low RDS(ON) |
| 描述与应用 | 60V P沟道逻辑电平功率沟槽MOSFET 概述 60V P沟道MOSFET采用飞兆半导体的高电压功率沟槽过程。它已被优化电源管理应用。 应用 •DC-DC转换器 •负荷开关 •电源管理 特点 •开关速度快 •高性能沟道技术极低的RDS（ON） |