最大源漏极电压Vds
Drain-Source Voltage | 30V/-12V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 16V/8V |
最大漏极电流Id
Drain Current | 2.4A/-2.5A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 105mΩ@ VGS = 4.5V, ID =2.2A/220mΩ@ VGS =-1.8V, ID =-1.6A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 1~3V/-0.4~-1.5V |
耗散功率Pd
Power Dissipation | 1.3W |
| Description & Applications | 12V P-Channel Power Trench MOSFET, 30V Power Trench Sync FET General Description This complementary P-Channel MOSFET with Sync FET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for providing an extremely low RDS(ON) in a small package. Applications DC/DC converter Power management Features · Low gate charge · High performance trench technology for extremely low RDS(ON). · Super SOT –6 package |
| 描述与应用 | 12V P沟道功率沟槽MOSFET，30V功率沟道同步FET 概述 这种互补的P沟道MOSFET同步FET已专门设计，以提高整体效率的DC / DC转换器采用同步或传统开关PWM控制器。它已被优化在一个小型封装提供极低的RDS（ON）。 应用 DC/ DC转换器 电源管理 特点 ·低栅极电荷 ·高性能沟道技术极低的RDS（ON）。 ·超级SOT-6包装 |