| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 4.6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 7.7Ω/Ohm @1.2A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-3V |
| 耗散功率Pd Power Dissipation | 56W |
| Description & Applications | 30V N-Channel PowerTrench ÒMOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. · 46 A, 30 V RDS(ON) = 12 mW @ VGS = 10 V RDS(ON) = 14 mW @ VGS = 4.5 V · Low gate charge · Fast Switching Speed · High performance trench technology for extremely low RDS(ON) |
| 描述与应用 | 30V N沟道的PowerTrenchÒMOSFET的的 概述 此N沟道MOSFET采用飞兆半导体 安森美半导体先进的PowerTrench进程， 已特别定制，以减低对状态 性和出色的开关性能，但为保持低栅极电荷。 低栅极电荷 ·开关速度快 ·高性能沟道技术极 · 低RDS（ON） |