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  • Model：FDD6030L
  • Manufacturer：HUABAN
  • Date Code：05+
  • Standard Package：2500
  • Min Order：10
  • Mark/silk print/code/type：FDD6030L
  • Package：TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current50A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.0136Ω/Ohm @1.2A,10V
开启电压Vgs（th） Gate-Source Threshold Voltage1.2V
耗散功率Pd Power Dissipation60W
Description & Applications150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC • 4.7 A, 150 V. DS(ON)= 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability.
描述与应用150V N-沟道PowerTrench MOSFET 概述 这N沟道MOSFET的设计 专门用于提高整体效率的DC / DC 转换器采用同步或常规 开关PWM控制器。 这些MOSFET具有更快的开关和更低 比其他具有可比性的MOSFET栅极电荷 RDS（ON）规格。 其结果是一个MOSFET，很容易和更安全的驾驶 （即使在非常高的频率），和DC / DC •低栅极电荷 •开关速度快 •高性能沟道技术极 低RDS（ON） •高功率和电流处理能力

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