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  • Model：FDC655AN
  • Manufacturer：HUABAN
  • Date Code：07NOPB 07+NOPB
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：55A
  • Package：SOT-163/SOT23-6

最大源漏极电压Vds Drain-Source Voltage50V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current6.3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.035Ω/Ohm @6.3A,10V
开启电压Vgs（th） Gate-Source Threshold Voltage1.2V
耗散功率Pd Power Dissipation1.6W
Description & ApplicationsSingle N-Channel, Logic Level, PowerTrench TM MOSFET General Description This N-Channel Logic LevelMOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications whe 6.3 A, 30 V. RDS(ON) = 0.027 W @ VGS= 10 V RDS(ON) = 0.035 W @ VGS= 4.5 V. Fast switching. Low gate charge ( typical 9 nC). SuperSOT TM-6 package: small footprint (72% smaller than SO-8); low p
描述与应用单N沟道逻辑电平，TM的PowerTrench MOSFET 概述 这N沟道逻辑电平MOSFET的生产采用 飞兆半导体先进的PowerTrench进程，已特别是针对减少通态电阻，同时保持出色的开关性能。 这些器件非常适合于低电压和电池供电应用的磨片 •开关速度快 •高性能沟道技术极 低RDS（ON） •高功率和电流处理能力

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