最大源漏极电压Vds
Drain-Source Voltage | 20V/-20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 12V/12V |
最大漏极电流Id
Drain Current | 2.9A/-2.2A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 115mΩ@ VGS =2.5V, ID =2.3A/240mΩ@ VGS =-2.5V, ID =-2.7A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 0.6~1.2V/-0.6~-1.2V |
耗散功率Pd
Power Dissipation | 1.1W |
| Description & Applications | Power MOSFET Features • Complementary N−Channel and P−Channel MOSFET • Small Size, 40% Smaller than TSOP−6 Package • Leadless SMD Package Featuring Complementary Pair • Chip FET Package Provides Great Thermal Characteristics Similar to Larger Packages • Low RDS(on) in a ChipFET Package for High Efficiency Performance • Low Profile (< 1.10 mm) Allows Placement in Extremely Thin Environments Such as Portable Electronics • Pb−Free Package is Available Applications • Load Switch Applications Requiring Level Shift • DC−DC Conversion Circuits • Drive Small Brushless DC Motors • Designed for Power Management Applications in Portable, Battery Powered Products |
| 描述与应用 | 功率MOSFET 特点 •互补N-通道和P-通道MOSFET •小尺寸，40％小于TSOP-6封装 •无铅SMD封装，拥有互补配对 •FET封装芯片提供了极大的热特性类似大包 •低RDS（ON）ChipFET包装在一个高效率的性能 •薄型（<1.10毫米）允许放置在极薄环境，如便携式电子产品 •无铅包装是可用 应用 •负载开关应用的需要电平转换 •DC-DC转换电路 •驱动器小型无刷直流电动机 •专为便携式，电池供电产品的电源管理应用 |